Novel Oxide Films for Active Devices (C2-WeA)
Wednesday, May 22 2019 2:00PM, Room Golden West
Moderated by: Vanya Darakchieva, IFM, Linköping University; Alyssa Mock, Naval Research Laboratory
Abstracts (Use Expand/Collapse icon in first column to see/hide details)
SchedulePaper #Invited TalkTitle
2:00 PMC2-WeA-1The Physics of Low Symmetry Metal Oxides with Special Attention to Phonons, Plasmons and Excitons
2:40 PMC2-WeA-3Materials Interfaces for β-Ga2O3 Power Devices
3:20 PMC2-WeA-5Phase Selectivity in Heteroepitaxial Ga2O3 Thin Films
4:00 PMC2-WeA-7Exfoliated β-Ga2O3 Nano-layer based (Opto)electronic Devices
4:40 PMC2-WeA-9Towards Controlled Exfoliation of β-Ga2O3 through Ion Implantation
5:00 PMC2-WeA-10A Comparison of In-doped SnO2 (ITO) Films and Doped ZnO in Magnetron Sputtering: Both Thermodynamic and Kinetic Advantages of ITO Films
5:20 PMC2-WeA-11Investigation on Microstructure and Piezoelectric Property of High Orientation Y-doped ZnO Thin Films via RF Magnetron Sputtering
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